Study on enhanced real time applications of compound semiconductor (SiC and GaN) power devices with AI and IoT Technologies

B. Prakash Ayyappan 1, *, T. Parthiban 1, M. Barkavi 1, V. Nithyapoorani 2, M. Sathya 2 and G. Gopperumdevi 2

1 Department of EEE, Sri Bharathi Engineering College for Women, Kaikkurichi, Pudukkottai-622 303, Tamil Nadu, India.
2 Department. of ECE, Sri Bharathi Engineering College for Women, Kaikkurichi, Pudukkottai-622 303. Tamil Nadu, India.
 
Review
International Journal of Science and Research Archive, 2024, 12(02), 947–964.
Article DOI: 10.30574/ijsra.2024.12.2.1309
Publication history: 
Received on 09 June 2024; revised on 16 July 2024; accepted on 19 July 2024
 
Abstract: 
Compound semiconductors, composed of two or more elements, differ from single-element semiconductors like silicon. These materials are crucial because they have a direct band gap, unlike elemental semiconductors such as silicon and germanium, making them ideal for optoelectronic applications like LEDs, semiconductor lasers, and photo detectors. Robots rely on sophisticated sensors to collect vital data for their operation, including internal data on temperature, moisture, movement, and position, as well as external data from images, infrared light, and sound, processed through semiconductor units. Compound semiconductors are integral to numerous technologies around us, including electric cars, solar panels, satellites, spacecraft, and smart phones. Future innovations like driverless cars and artificial intelligence will also heavily depend on these materials.
 
Keywords: 
Silicon Carbide; Gallium Nitride; Artificial Intelligence; Internet of Things; Emerging Technologies
 
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