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Characterization of Bi incorporated Sb2Se3 thin films deposited by arrested precipitation technique
Department of Chemistry, Krantisinh Nana Patil College, Walwa. Dist. Sangli, State: Maharashtra, India 415409.
Research Article
International Journal of Science and Research Archive, 2023, 08(01), 111-118.
Article DOI: 10.30574/ijsra.2023.8.1.0351
Publication history:
Received on 20 November 2022; revised on 02 January 2023; accepted on 05 January 2023
Abstract:
Antimony bismuth selenide thin films (Sb2-xBixSe3), with x varying from 0.00 to 0.10, have been deposited on glass substrate using the arrested precipitation technique (APT ). The preparative parameters such as temperature, concentration, and pH have been optimized in order to deposit Sb2-xBixSe3 thin films. The as-deposited Sb2-xBixSe3 thin films are specularly reflective and orange in colour. The films were characterized by optical absorption, x-ray diffraction (XRD), scanning electron microscope (SEM ) and energy dispersive x-ray analysis (EDS ) studies. An analysis of the optical absorption data of the as-deposited films revealed an indirect transition with the estimation of the corresponding band gap value.
Keywords:
Arrested precipitate technique; Thin film; Optical; Structural; EDS
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